- 您现在的位置：买卖IC网 > Sheet目录337 > LH28F160S5HNS-S1 (Sharp Microelectronics)IC FLASH 16MBIT 70NS 56SSOP
LHF16KS1
31
5.5 V CC , V PP , RP# Transitions
Block erase, full chip erase, (multi) word/byte write
and block lock-bit configuration are not guaranteed if
V PP falls outside of a valid V PPH1 range, V CC falls
outside of a valid V CC1/2 range, or RP#=V IL . If V PP
error is detected, status register bit SR.3 is set to "1"
along with SR.4 or SR.5, depending on the attempted
operation. If RP# transitions to V IL during block
erase, full chip erase, (multi) word/byte write or block
lock-bit configuration, STS(if set to RY/BY# mode)
will remain low until the reset operation is complete.
Then, the operation will abort and the device will
enter deep power-down. The aborted operation may
leave data partially altered. Therefore, the command
sequence must be repeated after normal operation is
restored. Device power-off or RP# transitions to V IL
clear the status register.
The CUI latches commands issued by system
software and is not altered by V PP or CE# transitions
or WSM actions. Its state is read array mode upon
power-up, after exit from deep power-down or after
V CC transitions below V LKO .
After block erase, full chip erase, (multi) word/byte
write or block lock-bit configuration, even after V PP
transitions down to V PPLK , the CUI must be placed in
read array mode via the Read Array command if
subsequent access to the memory array is desired.
5.6 Power-Up/Down Protection
The device is designed to offer protection against
accidental block and full chip erasure, (multi)
word/byte writing or block lock-bit configuration during
powers-up first. Internal circuitry resets the CUI to
read array mode at power-up.
A system designer must guard against spurious
writes for V CC voltages above V LKO when V PP is
active. Since both WE# and CE# must be low for a
command write, driving either to V IH will inhibit writes.
The CUI’s two-step command sequence architecture
provides added level of protection against data
alteration.
In-system block lock and unlock capability prevents
inadvertent data alteration. The device is disabled
while RP#=V IL regardless of its control inputs state.
5.7 Power Dissipation
When designing portable systems, designers must
consider battery power consumption not only during
device operation, but also for data retention during
system idle time. Flash memory’s nonvolatility
increases usable battery life because data is retained
when system power is removed.
In addition, deep power-down mode ensures
extremely low power consumption even when system
power is applied. For example, portable computing
products and other power sensitive applications that
use an array of devices for solid-state storage can
consume negligible power by lowering RP# to V IL
standby or sleep modes. If access is again needed,
the devices can be read following the t PHQV and
t PHWL wake-up cycles required after RP# is first
raised to V IH . See AC Characteristics ? Read Only
and Write Operations and Figures 17, 18, 19, 20 for
more information.
power transitions. Upon power-up, the device is
indifferent as to which power supply (V PP or V CC )
Rev. 2.0
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
LH28F320S3HNS-ZM
IC FLASH 32MBIT 110NS 56SSOP
LH28F320SKTD-ZR
IC FLASH 32MBIT 70NS 48TSOP
LHF00L28
IC FLASH 16MBIT 70NS 48TSOP
LPM409 CHASSIS
STNRD 4SLOT CHASSIS W/INPUT LEAD
LS15RB1201J04
POE SPLITTER 10.8W 12V @0.9A
LT1932ES6#TRMPBF
IC LED DRIVR WHITE BCKLGT TSOT-6
LT1937ES5#TRMPBF
IC LED DRIVR WHITE BCKLGT TSOT-5
LT3003EMSE#TRPBF
IC LED DRIVER BALLASTER 10-MSOP
相关代理商/技术参数
LH28F160S5HR-L10
制造商:未知厂家 制造商全称:未知厂家 功能描述:x8/x16 Flash EEPROM
LH28F160S5HR-L70
制造商:未知厂家 制造商全称:未知厂家 功能描述:x8/x16 Flash EEPROM
LH28F160S5HT-L10
制造商:未知厂家 制造商全称:未知厂家 功能描述:x8/x16 Flash EEPROM
LH28F160S5HT-L70
功能描述:IC FLASH 16MBIT 70NS 56TSOP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:96 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并联 电源电压:2.65 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP 包装:托盘
LH28F160S5HT-L70T/R
制造商:Sharp Microelectronics 功能描述:YSM SMART,64K BLOCK, 70NS
LH28F160S5HT-TW
功能描述:IC FLASH 16MBIT 70NS 56TSOP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:RAM 存储器类型:SDRAM 存储容量:256M（8Mx32） 速度:143MHz 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:90-VFBGA 供应商设备封装:90-VFBGA（8x13） 包装:托盘 其它名称:Q2841869
LH28F160S5-L
制造商:SHARP 制造商全称:Sharp Electrionic Components 功能描述:16 M-bit (2 MB x 8/1 MB x 16) Smart 5 Flash Memories (Fast Programming)
LH28F160S5-L10
制造商:SHARP 制造商全称:Sharp Electrionic Components 功能描述:16-MBIT(2MBx8/MBx16)Smart 5 Flash MEMORY